基于单晶硅各向异性特征的纳米压痕过程有限元仿真研究  

FEM Study on Nanoindentation Process of Monocrystal Silicon

作　　者：马尧[1] 王小月[1] 黄虎[1] 吕扬[1] 赵宏伟[1] 

机构地区：[1]吉林大学机械科学与工程学院,长春130025

出　　处：《长春理工大学学报（自然科学版）》2014年第4期99-103,共5页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金(50905073);科技部国际合作与交流专项(2010DFA72000);高等学校博士学科点专项科研基金(新)(20081831024);科技部科技人员服务企业行动项目(2009GJB10029);吉林省科技发展计划项目(20090101);吉林大学自然科学种子基金资助项目(498042320414)

摘　　要：本文采用各向异性弹塑性材料本构关系,利用非线性有限元软件MSC.Marc建立了单晶硅纳米压痕过程的三维模型,分别用玻氏、维氏、圆锥形和球形压头对单晶硅(100)晶面进行了纳米压痕过程的仿真分析,研究了单晶硅对于不同形状的压头、不同压头半锥角、不同最大加载力的加、卸载响应特性。仿真结果表明,压入相同深度时,圆锥形压头所需载荷最小,材料对圆锥形和球形压入产生的应力应变分布呈现出各向异性,体现了单晶硅在不同晶向上的材料性能存在差异。当最大加载力为25mN时,仿真得出维氏压头在单晶硅(100)晶面产生的压痕深度约为300nm,与相应实验结果基本相符。Anisotropic elastic-plastic constitutive relation was used in this paper for establishing a three-dimensional model about nanoindentation process on monocrystal silicon by the non-linear finite element software MSC.Marc. The nanoindentation simulations were performed using Berkovich,Vicker,conical and spherical indenters on monocrystal silicon（100）plane to study the response chatacteristics of the monocrystal silicon for different indenter geometries,different half-angle of conical indenters and different maximal loads during loading and unloading.The results show that,for the same indentation depth,the applied load was the lowest in the case with conical indenter,the stress and strain distributions of conical and spherical indentation presented anisotropic that reflected the material properties of monocrystal silicon are disparate in different crystal orientation. For a given maximal indent loads of 25 mN,the Vickers indenter generated a indentation depth of 300 nm in the simulation which was close to the corresponding experiment result.

关 键 词：单晶硅 纳米压痕 有限元仿真 加、卸载响应特性 微观力学性能 

分 类 号：O411.3[理学—理论物理]