一种基于自级联结构的低功耗植入式神经元放大器（英文）  

A Low Power Implantable Neural Amplifier Based on Self-Cascaded Structures

作　　者：刘新[1] 安广雷 

机构地区：[1]重庆城市管理职业学院信息工程学院,重庆401331 [2]俄克拉荷马州立大学MSVLSI实验室

出　　处：《半导体技术》2014年第9期651-655,共5页Semiconductor Technology

基　　金：Science and Technology Project Affiliated to the Education Department of Chongqing Municipality(KJ121702)

摘　　要：提出了一种基于自级联运算跨导放大器的低功耗低噪声的神经元放大器,其可用于植入式有源射频识别传感器。植入式传感器主要的难点是通过无线的方式为生物组织内功率器件或其他替代源供电的能力,介绍了一种能够由射频供电的超低功率的神经元放大器,为了减少功耗,放大器供电电压设置为0.6 V,是目前有记录的相对较低供电电压。通过测试,带通放大器的增益为25.7 dB,3 dB带宽为625 Hz^9.25 kHz,测量输入参考噪声为13.7μVrms,总功耗为1.68μW。此放大器由0.18μm CMOS工艺实现,通过低电压设计,得到一个功耗与射频功耗相匹配的植入式传感器。A low-power low-noise neural amplifier based on a self-cascaded operational transconductance amplifier（ OTA） was proposed for the implantable active radio-frequency identification sensor（ ARFID）. The major impediment for the implantable sensors is the ability to power the devices within the biological tissue without wires or other power sources that need to be replaced. An ultra-low power neural amplifier which could be powered via a radio frequency（ RF） source was introduced. To minimize the power,the amplifier was designed to operate at 0. 6 V,which is relatively a low power supply voltage reported to date. The test results show that the bandpass amplifier has a midband gain of 25. 7 dB with a 3 dB bandwidth from 625 Hz to9. 25 kHz. The measured input-referred noise is 13. 7 μVrms with a total power consumption of1. 68 μW. The amplifier was fabricated in the 0. 18 μm CMOS process. By utilizing the low-voltage design,an implantable sensor of power consumption levels compatible with the RF power was achieved.

关 键 词：神经元信号 低功耗低噪声设计 亚阈值操作 带通放大器 智能射频识别传感器(RFID) 

分 类 号：TN722.77[电子电信—电路与系统] TN43