忆阻元件与RLC以及二极管串并联电路的特性研究  

Properties of memristor in RLC circuit and diode circuit

作　　者：王天舒[1] 张瑞德[1] 关哲[1] 巴柯 俎云霄[1] 

机构地区：[1]北京邮电大学电子工程学院,北京100876

出　　处：《物理学报》2014年第17期329-336,共8页Acta Physica Sinica

基　　金：北京邮电大学大学生研究创新基金资助的课题~~

摘　　要：对第四类基本电路元件:忆阻元件与RLC以及二极管串并联电路特性进行了研究,分别建立了两种电路的数学模型,并进行了仿真研究,分析了电路中的电容、电感、电阻等参数对电路特性的影响,得出了相关的结论.The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model＇s parameters on the circuits＇ properties, simulations are made for the two mathematical models. The model＇s parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.

关 键 词：忆阻元件 RLC电路 二极管 数学模型 

分 类 号：O441.1[理学—电磁学]