Improvement for low power high performance hybrid type CAM  

作　　者：LU Wen-juan PENG Chun-yu LIN Zhi-ting WU Xiu-long CHEN Jun-ning 

机构地区：[1]School of Electronics and Information Engineering, Anhui University

出　　处：《The Journal of China Universities of Posts and Telecommunications》2014年第4期77-82,共6页中国邮电高校学报（英文版）

基　　金：supported by the Natural Science Fund for Colleges and Universities in Anhui Province (KJ2013A006)

摘　　要：Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.

关 键 词：CAM NAND-type NOR-type hybrid-type CAM design low power 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]