Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition  

作　　者：杨贺 申承民 田园 王高强 林少雄 张一 顾长志 李俊杰 高鸿钧 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第9期1-5,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2013CB933604,2010CB923004,and 2009CB929103);the National Natural Science Foundation of China;the Chinese Academy of Sciences

摘　　要：Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions： ideally to 2-3 sccm CH4 for 30 minutes.Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions： ideally to 2-3 sccm CH4 for 30 minutes.

关 键 词：GRAPHENE chemical vapor deposition Raman spectra 

分 类 号：O613.71[理学—无机化学]