Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask  

作　　者：陶涛 智婷 李民雪 谢自力 张荣 刘斌 李毅 庄喆 张国刚 蒋府龙 陈鹏 郑有炓 

机构地区：[1]National Laboratory of Solid Microstructures,Nanjing University [2]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing National Laboratory of Microstructures,Nanjing University [3]Ecomaterials and Renewable Energy Research Center (ERERC),Department of Physics,Nanjing University

出　　处：《Chinese Physics B》2014年第9期327-330,共4页中国物理B（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the Hi-tech Research Project of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,61274003,60936004,and 61176063);the Program for New Century Excellent Talents in University of China(Grant No.NCET-11-0229);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK2011010);the Funds of Key Laboratory of China(Grant No.9140C140102120C14);the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China

摘　　要：A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency （IPCE） shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency （IPCE） shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.

关 键 词：PHOTOELECTROLYSIS InGaN photoelectrode surface roughening hydrogen generation 

分 类 号：O469[理学—凝聚态物理]