Structural properties of a-SiO_x:H films studied by an improved infrared-transmission analysis method  

作　　者：王烁 张晓丹 熊绍珍 赵颖 

机构地区：[1]Institute of Photo-electronic Thin Film Device and Technique,Nankai University

出　　处：《Chinese Physics B》2014年第9期578-584,共7页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2011CBA00705,2011CBA00706,and 2011CBA00707);the National Natural Science Foundation of China(Grant No.60976051);the Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0295)

摘　　要：An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.

关 键 词：amorphous silicon oxide film thin thickness infrared transmission structural properties 

分 类 号：O484[理学—固体物理]