Preparation and Characterization of Cu_2ZnSn(S_xSe_(1-x))_4Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors  

作　　者：Xin Jiang Lexi Shao Jun Zhang Jianmin Chen 

机构地区：[1]State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences [2]School of Physical Science and Technology,Zhanjiang Normal University [3]University of Chinese Academy of Sciences

出　　处：《Acta Metallurgica Sinica(English Letters)》2014年第4期689-693,共5页金属学报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos.51275509 and 51175491)

摘　　要：Cu2ZnSn（S,Se）4（CZTSSe） thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization.Composition,microstructure,morphology,and properties of the asprepared CZTSSe thin films were investigated.XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions.SEM results showed that the CZTSSe thin film had a uniform morphology and large grains.EDS results revealed the composition of CZTSSe film was Cu：Zn：Sn：S：Se = 23.7：12.6：12.2：37.7：13.8（in at%）,which was in accordance with the stoichiometric Cu2ZnSn（S,Se）4.The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV.The resistivity,carrier concentration,and mobility were 0.53 X cm,7.9 9 1018cm3,and 7.5 cm2/（Vs）,respectively.Cu2ZnSn（S,Se）4（CZTSSe） thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization.Composition,microstructure,morphology,and properties of the asprepared CZTSSe thin films were investigated.XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions.SEM results showed that the CZTSSe thin film had a uniform morphology and large grains.EDS results revealed the composition of CZTSSe film was Cu：Zn：Sn：S：Se = 23.7：12.6：12.2：37.7：13.8（in at%）,which was in accordance with the stoichiometric Cu2ZnSn（S,Se）4.The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV.The resistivity,carrier concentration,and mobility were 0.53 X cm,7.9 9 1018cm3,and 7.5 cm2/（Vs）,respectively.

关 键 词：Cu2ZnSn（S Se）4 Evaporation Sulfo-selenization Thin film 

分 类 号：TB383.2[一般工业技术—材料科学与工程]