Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors  

作　　者：马丽娟 纪小丽 陈原聪 夏好广 朱晨昕 郭强 闫锋 

机构地区：[1]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [2]Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205

出　　处：《Chinese Physics Letters》2014年第9期141-143,共3页中国物理快报（英文版）

摘　　要：The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.

分 类 号：TN386[电子电信—物理电子学] TM914.41[电气工程—电力电子与电力传动]