氧气气氛下退火处理对ITO薄膜性能的影响  

Influence of annealing treatment in O_2 atmosphere on properties of ITO thin film

作　　者：曹国华[1] 蔡红新[1] 张宝庆[2] 李明[1] 康朝阳[1] 

机构地区：[1]河南理工大学物理化学学院,河南焦作454000 [2]河南理工大学材料科学与工程学院,河南焦作454000

出　　处：《河南理工大学学报（自然科学版）》2014年第5期671-674,共4页Journal of Henan Polytechnic University（Natural Science）

基　　金：国家自然科学基金资助项目(51301062);亚稳材料制备技术与科学国家重点实验室开放课题(201207);河南省教育厅科学技术研究重点项目(13B430019);河南理工大学博士基金资助项目(B2012-007)

摘　　要：采用AFM,XPS,Hall等手段分析了氧气气氛下退火处理对ITO薄膜性质的影响,并用处理的ITO制作了有机电致发光器件.结果表明,退火处理后ITO薄膜的表面粗糙度增加,光学透过率降低.ITO薄膜经0.5 h退火后电阻率增大了近2倍,对有机半导体材料的空穴注入能力显著提高,相应的有机发光器件性能得到明显改善.ITO薄膜光电性能的变化归因于ITO表面化学组分的改变.The influence of annealing treatment in 02 atmosphere on the properties of indium-tin-oxide （ITO） film was investigated by AFM, XPS and Hall techniques. After annealing, the roughness of ITO thin film was increased,and the optical transmittance was a little decreased. The resistivity of ITO thin film annealing for half an hour was nearly tripled. Moreover,the hole injection from ITO thin film into organic semiconductor was sig- nificantly enhanced via annealing, and the performance of organic light emitting diode was improved much. The variation of the optical and electrical properties of ITO can be attributed to the fact that the annealing treatment change the chemical composition of the surface.

关 键 词：ITO 表面化学组分 退火处理 

分 类 号：O484[理学—固体物理]