准恒定压控增益的压控振荡器设计  

Design of VCO with Quasi-Constant Voltage-controlled Gain

作　　者：宋翔[1] 王志功[1] 徐建[1] 田密[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《中国集成电路》2014年第9期56-59,共4页China lntegrated Circuit

基　　金：国际科技交流与合作专项(2011DFA11310)

摘　　要：在DRM DAB系统设计中,压控振荡器需要满足宽的调频范围,而其压控增益的差别需要控制在一定的范围内,以使得锁相环的稳定性得到提高,同时为了降低锁相环环路对噪声的敏感性,我们需要低的压控增益。据此,本文所采用的可变电容阵列结构有效地满足了上述要求,使用SMIC 0.18μm CMOS工艺,仿真得到的结果显示在1.71G振荡频率1MHZ频偏处的相位噪声为-124.3d Bc/Hz.压控范围为1.71-2.31GHz。In the design of DRM/DAB system, the voltage-controlled oscillator （ VCO ） needs to have a large frequency tuning range. Its gain variation should be keeped in a small range,in order to make the PLL more stable. Also, to make the PLL less sensitive to the noise, we need to achieve a low VCO gain. The variable varactors structure adopted in this paper can meet the requirements above. Using SMIC 0.18- μm CMOS process. The simulation results show the phase noise is -124.3 dBc/Hz at 1-MHz frequency offset at 1.71-GHz oscillation frequency, the tuning range is from 1.71 to 2.31 GHz.

关 键 词：相位噪声 调频范围 压控振荡器 压控增益 

分 类 号：TN752[电子电信—电路与系统]