水热腐蚀时间对铁钝化多孔硅表面形貌和光致发光的影响  

Impact of Hydrothermal Etching Time on Porous Morphology and Photoluminescence of Iron-Passivated Porous Silicon

作　　者：陈景东[1] 张婷[2] 汪庆祥[2] 

机构地区：[1]闽南师范大学物理与信息工程学院,福建漳州363000 [2]闽南师范大学化学与环境学院,福建漳州363000

出　　处：《光学学报》2014年第9期211-215,共5页Acta Optica Sinica

基　　金：国家自然科学基金(21275127);福建省教育厅A类科技基金(JA14196);闽南师范大学科研基金(SK08013)

摘　　要：采用水热腐蚀法制备了4个腐蚀时间不同的铁钝化多孔硅样品,铁钝化多孔硅样品表面呈海绵结构,随着腐蚀时间增加,样品表面的平整度下降,腐蚀孔尺寸差别有增大的趋势。在250nm光激发下,样品发光峰位于620nm附近,半峰全宽约130nm。腐蚀时间从10min增加到40min,4个样品的发光峰并未出现定向的红移或蓝移。结合样品傅里叶变换红外吸收光谱的结果,铁钝化多孔硅的光致发光行为可归因于量子限制-发光中心作用,相应的辐射复合发光中心为非桥氧空穴。Hydrothermal etching method is employed to prepare four Iron-passivated porous silicon （IP-Si） samples of different etching time. The sponge-like morphology of the samples is observed by scanning electron microscope （SEM）, and larger diameter difference of etching holes and lower morphology smooth are found as a result of increasing etching time. Under 250 nm excitation, all samples emit strong orange light with peak around 620 nm and full width at half maximum （FWHM） of 130 nm. And no correlation between photoluminescence peaks and etching time is found. Together with the result of Fourier transform infrared spectroscopy study, the physical mechanism for the photoluminescence of IP-Si is interpreted by using the quantum confinement-luminescence center model, and the non-bridging oxygen hole center is ascribed as the radiative recombination luminescence center.

关 键 词：光电子学 多孔硅 铁钝化 光致发光 非桥氧空穴 水热腐蚀 

分 类 号：O482[理学—固体物理]