浮地型忆阻器混沌电路的分析与实现  

Analysis and implementation of a floating memristor chaotic circuit

作　　者：谭志平[1] 曾以成[1] 李志军[2] 洪庆辉[1] 

机构地区：[1]湘潭大学光电工程系,湘潭411105 [2]湘潭大学信息工程系,湘潭411105

出　　处：《仪器仪表学报》2014年第9期2123-2129,共7页Chinese Journal of Scientific Instrument

基　　金：国家自然科学基金(61230301;61176032)资助项目

摘　　要：利用磁通控制的分段线性浮地型忆阻器,设计了一个新型四阶忆阻器混沌电路。分析系统的基本动力学行为,如平衡点稳定性,李雅普诺夫指数和分岔图。数值仿真结果表明电路可产生一类特殊的混沌吸引子,且随系统参数的改变可产生丰富复杂的混沌行为。为验证电路的混沌行为,采用基本电路元件设计了一个浮地型忆阻器模拟等效电路,并对所提忆阻器混沌电路进行了实验验证,结果与理论分析基本吻合。A novel four-order memristor chaotic circuit is presented in this paper,which utilizes a flux-controlled floating memristor to act as the nonlinear element.The basic dynamic properties of the new circuit,such as equilibrium stability,Lyapunov exponent spectrum and bifurcation diagram are analyzed with universal dynamics analysis method.Numerical simulation results show that the circuit can produce a class of special chaotic attractors and exhibits complicated chaotic behavior as the system parameters change.In order to verify the chaotic behavior of the circuit,the equivalent circuit of the floating memristor was designed with basic electric components and verified in experiment.The experiment results are consistent with theoretical analysis ones.

关 键 词：忆阻器 浮地 混沌 

分 类 号：O415.5[理学—理论物理] TH867.7[理学—物理]