质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响  

Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells

作　　者：岳龙[1,2] 吴宜勇[1] 张延清[1] 胡建民[3] 孙承月[1] 郝明明[2] 兰慕杰[4] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [2]工业和信息化部电子第五研究所,电子元器件可靠性物理及其应用技术重点实验室,广州510610 [3]哈尔滨师范大学物理与电子工程学院,哈尔滨150025 [4]哈尔滨工业大学航天学院,哈尔滨150025

出　　处：《物理学报》2014年第18期438-444,共7页Acta Physica Sinica

基　　金：国防科工局技术基础科研项目(批准号:Z1620120003);工业和信息化部电子第五研究所发展基金青年计划专项(批准号:13F06);工业和信息化部电子第五研究所所发展C类项目(批准号:13C05)资助的课题~~

摘　　要：基于p-n结暗特性双指数模型,对经质子辐射后的单结GaAs/Ge太阳电池的暗特性I-V曲线进行数值拟合,确定了单结GaAs/Ge太阳电池在辐射前后的四个暗特性特征参数,即串联电阻R_s、并联电阻R_(sh)、扩散电流I_(s1)和复合电流I_(s2).研究结果表明,质子辐射后单结GaAs/Ge太阳电池的R_s,R_(sh),I_(s1)和I_(s2)四个暗特性参数均发生显著变化.经低能质子辐射后,单结GaAs/Ge太阳电池的R_(sh)随位移损伤剂量的增加而减小,而R_s,I_(s1)和I_(s2)三个参数随位移损伤剂量的增加而增大,其中串联电阻随位移损伤剂量线性增加而与辐射质子能量无关.理论分析表明,上述参数的变化与质子辐射损伤区域分布有关.基区和发射区的损伤主要引起单结电池串联电阻和扩散电流的增加;结区的损伤导致并联电阻减小,复合电流增大.In this paper, the dark electrical properties are studied by measuring the dark current-voltage characteristics of a type of domestic single-junction （SJ） GaAs/Ge solar cell after proton irradiation. Using a double exponential mode for the dark electrical properties of p-n junction, the dark I-V curves of the proton-irradiated SJ cells are mathematically fitted, and there are four kinds of typical parameters, namely serious resistance （Rs）, parallel resistance （Rsh）, diffusion current （Is1）, and recombination current （Is2）, which are determined to characterize the irradiation effects. Hence, four parameters such as Rs, Rsh, Is1andIs2 are significantly changed after proton irradiation, where Rs, Rsh, Is1 increase while Rsh decreases with increasing the displacement damage dose. In addition, Rs increases with displacement damage dose, which is unrelated to proton energies. Theoretical analysis indicates that the above-mentioned changes of the parameters result from the damage distributions in different regions of the solar cells. Irradiation-induced damage in the base and emitter regions of the cells could induce Rs and Is1 to augment, while junction-region damage causes the Rsh to decrease but the Is2 to increase.

关 键 词：砷化镓太阳电池 质子辐射 暗特性 数值拟合 

分 类 号：TM914.4[电气工程—电力电子与电力传动]