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机构地区:[1]东北大学材料与冶金学院,辽宁沈阳110819
出 处:《东北大学学报(自然科学版)》2014年第9期1284-1287,1291,共5页Journal of Northeastern University(Natural Science)
基 金:中央高校基本科研业务费专项资金资助项目(N110402004)
摘 要:采用固体粉末法分别对基体组织为α-Ti的TA1和基体组织为(α+β)-Ti的TC4钛合金表面进行了渗硼,在偏光显微镜和扫描电镜(SEM)下观察了渗层的形貌,用X射线衍射(XRD)分析了渗层的物相组成.实验结果表明,渗硼温度在850~1000℃范围内,TA1表面渗层为平行于基体表面的多层结构,为Ti3O相和TiB相;当渗硼温度高于920℃时TiB为主要组成并出现了TiB2相,且硼钛化合物的含量随温度升高而增加.当渗硼温度低于1000℃时,TC4表面渗层为Ti3O相和TiB相,在渗硼温度高于1 000℃时,渗层为TiB2+TiB晶须结构.渗硼温度高于1 000℃是TA1和TC4表面形成硼钛化合物的充分条件.The solid powder boronizing, on the surface of titanium alloys with matrix structure α-Ti of TA1 and (α +β)-Ti of TC4, was investigated. The morphology of boride layer was observed by polarizing microscope and scanning electron microscope (SEM). The phase composition of boride layer was analyzed by X-ray diffraction (XRD). The results show that when boronizing temperature is in the range of 850 - 1 000 ℃, diffusion layers on TA1 in a multilayer structure are paralleled to the surface of the substrate, which composes of Ti3 O and TiB phases. When the temperature is higher than 920 ℃, TiB becomes the major component in the diffusion layer with TiB2, and the content of titanium borides increases with temperature. When the temperature is lower than 1 000 ℃, Ti30 and TiB are the major components of the layer on TC4. When it is higher than 1 000 ℃, the layer is TiB2 and TiB whisker. Boronizing temperature above 1 000 ℃ is the sufficient condition for the formation of titanium borides.
关 键 词:纯钛TA1 钛合金TC4 硼钛化合物 固体渗硼 扩散机理
分 类 号:TG156.8[金属学及工艺—热处理]
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