大面积柔性硅基薄膜电池集成串联组件  

Study and fabrication of large area flexible monolithically seriesintegrated Si-based thin film modules

作　　者：陈亮[1] 马宁华[1] 杨君坤[1] 叶晓军[1] 陈臻纯[1] 

机构地区：[1]上海空间电源研究所,上海200245

出　　处：《光电子．激光》2014年第9期1652-1656,共5页Journal of Optoelectronics·Laser

基　　金：国家"863"(2011AA050503);上海市科技成果转化与产业化(12dz1201100)资助项目

摘　　要：采用卷对卷工艺制备了叠层非晶硅/非晶硅锗(a-Si/a-SiGe)电池,采用激光刻划与丝网印刷实现集成串联,形成柔性薄膜电池集成串联组件。研究了SiGe电池渐变带隙、柔性衬底nip倒结构激光刻划、反向脉冲电治疗,并用以改善柔性薄膜电池集成内联组件性能。集成组件有5个子电池内部串联而成,有效面积转换效率达5.424%(AM0,100.1cm2),开路电压达7.156V。The key technologies of flexible monolithically series-integrated a-Si thin film modules on pol mer substrate are studied and the modules are fabricated. Tandem a-Si/a-SiGe solar cell can obtain higher convention efficiency and laser scribing is very important in monolithic module fabrication. The SiGe grading band gap,laser scribing of nip typed solar cell and electrical curing to remove shunts are discussed and used to improve monolithic modulers performance. On polyimide substrate, the back reflector Ag/ZnO is sputtered by roll-to-roll sputtering machine,the n-i-p a-Si/a-SiGe is deposited by roll-to-roll plasma enhanced chemical vapor deposition （PECVD） machine, and the ITO layer is sputtered by roll-to- roll sputtering machine with a mask. At last, monolithic series integration is obtained by laser scribing and screen printing. A monolithic module includes five cell stripes , and the best conversion efficiency is 5. 424%（AM0,100. 1 cm^2）with open voltage of 7. 156 V.

关 键 词：柔性薄膜太阳电池 非晶硅锗(a-SiGe) 集成串联组件 激光刻划 

分 类 号：TM914.42[电气工程—电力电子与电力传动]