Cu(In_(0.7)Ga_(0.3))Se_2薄膜太阳电池的研究  

Research on Cu(In_(0.7)Ga_(0.3))Se_2 thin film solar cells

作　　者：朱美玲[1] 张项安 胡筱[1] 王鹏[1] 李苗苗[2] 

机构地区：[1]许继集团有限公司,河南许昌461000 [2]河南师范大学物理与信息工程学院,河南新乡453007

出　　处：《电源技术》2014年第9期1634-1636,1674,共4页Chinese Journal of Power Sources

摘　　要：采用直流溅射方法研究Cu(In0.7Ga0.3)Se(CIGS)薄膜太阳电池的背电极Mo薄膜、吸收层CIGS薄膜、缓冲层ZnS薄膜以及窗口层ZnO:Al(ZAO)薄膜的制备条件,并利用XRD、AFM和SEM对薄膜表面形貌进行表征。根据实验结果制备了性能良好的CIGS薄膜电池,并初步研究了电池的I-V特性,研究发现制备的太阳电池的填充因子大概为36%,并分析影响填充因子的原因。通过反复研究CIGS薄膜电池的制备条件,为制备高效CIGS薄膜电池奠定了基础。The back electrode, absorber layer, buffer layer and window layer of CIGS thin film solar cells were prepared by magnetron sputtering. The surface morphology of all thin films was characterized by XRD, AFM and SEM. According to the experimental results, the CIGS thin film solar cells were prepared. The preliminary investigation of the I-V characteristics were also carried out, and the FFof the CIGS thin solar cells is 36%. By analyzing the experimental results of CIGS thin film solar cells, processing parameters have been optimized in order to make it easier to prepare the CIGS thin film solar cells in the future.

关 键 词：CIGS薄膜电池 Ⅰ-Ⅴ特性 测控溅射 电学性能 光学性能 

分 类 号：TM914.4[电气工程—电力电子与电力传动]