直接生长蓝宝石整流罩的方法研究  

Study on the Method of Direct Growth of Sapphire Cowling

作　　者：佘建军[1] 何晔[1] 武欢[1] 李海林[1] 宋晓佳[1] 母江东[1] 邓力[1] 王璐[1] 

机构地区：[1]中国电子科技集团公司第26研究所,重庆400060

出　　处：《压电与声光》2014年第4期628-630,共3页Piezoelectrics & Acoustooptics

摘　　要：基于人工晶体的导模法生长技术,设计了提拉位移法和坩埚旋转法两种生长方法,分析了直接生长蓝宝石整流罩的生长原理,建立了晶体生长高度和生长半径的状态方程。结果表明,通过理论参数和实际采样值之间的对比调整,这两种方法均可实现蓝宝石整流罩的直接生长。Two methods of sapphire growth including the pulling displacement method and the crucible rotation method are designed based on the edge-defined film-fed growth （EFG） technique. The principle of growing sapphire cowling directly is analyzed and the state equation of the height and radius of crystal growth is established. The re- suits show that the sapphire cowling can be grown directly through contrasting and adjusting the theoretical parame- ters and actual sampling values.

关 键 词：蓝宝石整流罩 直接生长 导模法 提拉移位法 坩埚旋转法 

分 类 号：TN384[电子电信—物理电子学] TH706[机械工程—仪器科学与技术]