底钉扎与顶钉扎结构在磁传感器中应用研究  

Research on Application of Bottom Pinned and Top Pinned Structures in Magnetic Sensor

作　　者：杜伟伟[1] 唐晓莉[1] 苏桦[1] 张怀武[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2014年第4期671-674,共4页Piezoelectrics & Acoustooptics

摘　　要：该文采用高真空磁控溅射技术分别制备了无缓冲层的NiFe/IrMn和IrMn/NiFe及有缓冲层的IrMn/NiFe 3种结构薄膜,并用振动样品磁强计对样品磁性能进行测试。结果表明,直接在Si上淀积NiFe/IrMn和在适当厚度的Ta/NiFe或Cu层作为缓冲层上淀积IrMn/NiFe的2种结构,有很大的交换偏置场。这样大的交换偏置场适合应用于顶钉扎和底钉扎结构的自旋阀巨磁电阻器件。Three kinds of structures were prepared by high vacuum magnetron sputtering technology.-NiFe/IrMn films and IrMn/NiFe firms without buffer layer;and IrMn/NiiFe films with buffer layer respectively. The magnetic properties were tested with a vibrating sample magnetometer. Result showed that large exchange bias existed both in NiFe/IrMn which was deposited directly on Si, and also in IrMn/NiFe bio-layer structure which were deposited on proper thickness of Ta/NiFe Layer or Cu layer. Such large exchange bias was the most suitable for top and bottom pinned spin valve giant magneto-resistance device.

关 键 词：交换偏置场 巨磁阻 振动样品磁强计 磁滞回线 传感器 

分 类 号：O484.43[理学—固体物理]