SiC含量对氮化铝基微波衰减复合陶瓷性能的影响研究  

Effects of SiC content on the dielectric properties of AlN-SiC composite ceramics

作　　者：高鹏[1] 贾成厂[1] 曹文斌[1] 崔照雯[1] 常宇宏[1] 刘建金[1] 王聪聪[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《粉末冶金技术》2014年第4期248-253,共6页Powder Metallurgy Technology

基　　金：中俄国际合作专项(2010DFR50360)

摘　　要：以氮化铝和纳米碳化硅为原料,无烧结助剂,1 600 ℃下保温5 min,放电等离子烧结（以下简称SPS）,制备了AlN-SiC复合陶瓷.利用扫描电镜,能谱分析仪,XRD,安捷伦4284A LRC阻抗分析仪等对其致密度,显微结构,表面成分,生成的主要物相,介电损耗和介电性能进行分析.结果表明,AlN-SiC复合陶瓷的致密度在91％以上,物相主要有作为原料的AlN和β-SiC,以及烧结之后生成的2H-SiC和Fe5 Si3;随着SiC含量的增加,材料的介电损耗,介电常数相应增加;SiC含量在30％～40％（质量分数,下同）之间,1 MHz以下的损耗角正切tanδ≥0.3,表明纳米SiC具有较强的吸波性能.相同含量的碳化硅,材料的介电常数和介电损耗随着频率的增加而降低.AlN-SiC composites which A1N and nano 13-SIC acted as the raw materials were prepared by SPS at the temperature of 1 600 for 5 rain without any sintering additives in a vacuum atmosphere. The micmstmcture, the produced phases, dielectric constant and loss tangent of the ceramics were characterized by scanning electron microscopy,XRD, and Agilent 4284A LRC automatic tester respectively. The results show that the main phase are AlN and beta SiC as well as 2H-SiC and FesSis generated by sintering. The relative densities of sintered ceramics are in excess of 91%. Tb, e loss tangent and dielectric constant is increased by the SiC content increasing. The loss tangent is more than 0. 3 with the SiC content ranging from 30% - 40%. It＇ s indicated that nanometer SiC has strong absorbing property. With the same content of silieon carbide, the dieleetrie constant and dielectric loss decrease with the frequency increasing.

关 键 词：AlN-SiC复合陶瓷 氮化铝 纳米碳化硅 SPS 介电损耗 

分 类 号：TQ174.758[化学工程—陶瓷工业]