平栅型双层膜阴极的脉冲电压处理及场致发射性能研究  

Research on field emission property of the planar-gate triode with double-layer films cathode treated by pulse voltage

作　　者：林金阳[1] 张永爱[2] 杨尊先[2] 郭太良[2] 

机构地区：[1]福建工程学院信息学院,福州350108 [2]福州大学光电显示技术研究所,福州350002

出　　处：《功能材料》2014年第19期19061-19063,19069,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61106053);福建省自然科学基金资助项目(2012D068;2012J01185);福建工程学院科研基金资助项目(GY-Z13040)

摘　　要：采用脉冲电压法对平栅双层膜阴极进行处理,进一步提高其场致发射性能。采用磁控溅射法在平行栅电极上溅射氧化铋薄膜和氧化锡薄膜,并对薄膜进行AFM分析,通过场致发射测试结果表明,经过脉冲电压法处理后的平行栅双层膜阴极的发射性能,如亮度、均匀度等有了很大的提高,阳压为3 000 V,栅压为190 V,其腔体亮度可达462 cd/m2。平行栅双层膜阴极的脉冲电压处理可以有效改善阴极的场发射性能,为改善SED阴极结构及材料提供了一条有效的实验方法。In this paper,the field emission properties of the planar-gate triode with double-layer films cathode was improved by post-treatment of pulse voltage.The field emission device based on the planar-gate triode with B2 O 3/SnO 2 double-layer films based surface conducted emitter (SCE)has been successfully fabricated by mag-netron sputtering.The double-layer film’s surface morphology was characterized by atomic force microscopy, and its field emission (FE)properties were investigated.The experiment results show that the field emission properties,such as brightness,uniformity,was greatly improved by post-treatment of pulse voltage.The de-vice produced a brightness of 462 cd/m2 when the anode voltage was 3 000 V and the gate voltage was 1 90 V. The planar-gate triode with double-layer films cathode improved by post-treatment of pulse voltage was a feasi-ble method for improving field emission properties.The results provided an effective experimental method for improving SED structure and cathode.

关 键 词：平行栅 场发射 氧化锡薄膜 氧化铋薄膜 

分 类 号：TB332[一般工业技术—材料科学与工程]