AlGaN MSM结构日盲型紫外探测器  

AlGaN solar-blind ultraviolet photodetector with MSM structure

作　　者：杨莲红[1] 张保花[1] 王俊珺[1] 魏伟[1] 

机构地区：[1]昌吉学院物理系,新疆昌吉831100

出　　处：《现代电子技术》2014年第20期120-122,126,共4页Modern Electronics Technique

基　　金：昌吉学院院级课题(2011YJYB001;2011YJB006);昌吉学院重点建设学科项目(昌院校发[2012]92号)

摘　　要：采用低压-金属有机化学气相沉积（MOCVD）法在（0001）方向的AlN/蓝宝石模板上生长得到Al组分为40%的AlGaN材料，设计并制作了MSM型AlGaN 日盲紫外探测器。通过HRXRD，SEM，AFM对AlGaN材料进行了表征，结果表明：该材料为六方相结构，且应变程度很小，粗糙度（RMS）为1.32 nm。通过测试器件在230～320 nm之间、在不同偏压下的光谱响应曲线，发现器件的截止波长在285 nm附近，截止边很陡峭；器件的峰值响应波长为275 nm；在7 V偏压下，器件峰值响应度达到最大2.8 mA/W；零偏压下，器件的暗电流1×^10-13A，器件的暗电流很小。AlGaN material with 40%Al component was grown on AlN/sapphire substrate by low-voltage metal organic chemical vapor deposition（MOCVD）method. The AlGaN solar-blind UV photodetector with MSM structure was designed and fabricated. AlGaN material was characterized by using high resolution X-ray diffraction （HRXRD）,scanning electron microscope （SEM） and atomic force microscopy（AFM）. The results indicates that the material is hexagonal,its strain in the AlGaN is small and roughness（RMS）is 1.32 nm. According to the spectral response curve under various bias,it is found that the cut-off wave-length of the device is near 285 nm. The cut-off edge is very steep. The peak response wavelength is 275 nm. The peak respon-sivity is 2.8 mA/W at 7 V bias voltage. The dark current of detector is 1×10^-13A under zero bias voltage,and very small.

关 键 词：日盲型 紫外探测器 金属有机化学气相沉积法 光谱响应 

分 类 号：TN23-34[电子电信—物理电子学]