基于阳极氧化铝纳米光栅的薄膜硅太阳能电池双重陷光结构设计与仿真  

Design and simulation of anodic aluminum oxide nanograting double light trapping structure for thin film silicon solar cells

作　　者：秦飞飞[1] 张海明[1] 王彩霞[1] 郭聪[1] 张晶晶[1] 

机构地区：[1]天津工业大学理学院,天津300387

出　　处：《物理学报》2014年第19期440-445,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61274064)资助的课题~~

摘　　要：本文提出了表面和底部均带有阳极氧化铝(AAO)纳米光栅的薄膜硅太阳能电池双重陷光结构,利用FDTD软件仿真研究了AAO纳米光栅的周期、厚度和占空比对薄膜硅太阳能电池短路电流密度的影响,并对AAO结构参数进行了优化.仿真结果表明,表面AAO最佳结构参数是周期440 nm,厚度75 nm,占空比0.5,底部AAO最佳结构参数是周期380 nm,厚度90 nm,占空比为0.75.双重AAO组合陷光结构可有效增加薄膜硅太阳能电池在280—1100 nm范围内的光吸收,吸收相对增强可以达到74.44%.In this paper, we design a type of light trapping structure with an anodic aluminum oxide（AAO） nanograting on the surface and the backside of thin Si solar cells. Simulation of the influence of AAO＇s period, hole thickness, and duty cycle on thin Si solar cell＇s short current density are carried out by finite difference time domain method. Simulation results show that the optimum size for surface AAO is 0.5 for duty cycle, 75 nm for thickness, 440 nm for period, and the optimum AAO size for rear AAO is 0.75 for duty cycle, 90 nm for thickness, 380 nm for period. The double AAO light trapping structure can increase the light absorption in the wavelength range from 280 to 1100 nm,the absorption relative enhancement is 74.44%.

关 键 词：薄膜硅太阳能电池 阳极氧化铝 陷光结构 时域有限差分法 

分 类 号：TM914.41[电气工程—电力电子与电力传动]