一种在弱酸溶液中采用金属辅助湿法化学刻蚀黑硅的新方法  

A New Method to Prepare Black Silicon by Using Metal-assisted Chemical Etching under Weak Acid Aqueous Solution

作　　者：廖承菌[1,2] 李学铭[1,2] 杨培志[1,2] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092 [2]云南师范大学太阳能研究所,云南昆明650092

出　　处：《云南师范大学学报（自然科学版）》2014年第5期18-20,共3页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金资助项目(61066004;U1037604)

摘　　要：为降低黑硅材料的成本,将太阳电池级单晶硅片浸入含有氯金酸（HAuCl4）的草酸/氢氟酸（H2C2O4/HF）混合水溶液中做刻蚀.利用扫描电子显微镜（SEM）和紫外—可见—近红外分光光度计对表面形貌和反射光谱进行了表征与测量.结果表明：样品表面具有网格状陷光结构,在350-2 500nm波段平均反射率约为11.3%.In order to further reduce the cost of preparation of black silicon,a novel method to prepare black silicon based on as-cut silicon has been performed under H2C2O4/HF mixed aqueous solution containing HAuCl4.The reflective spectrum of such black silicon surface and the microstructure were measured by UV-VIS-NIR spectrophotometer and scanning electron microscope（SEM）,respectively.Results show that the sample has grid-like light-trapping structure,its average reflectance is roughly 11.3% in the range of 350-2 500 nm.

关 键 词：黑硅 弱酸溶液 广谱吸收 

分 类 号：O613.72[理学—无机化学]