基于PFM控制Boost型DC-DC变换器的带隙基准源  

Based on PFM Control Boost Type DC-DC Converter Bandgap Reference

作　　者：王宇星[1] 朱波 

机构地区：[1]无锡科技职业学院,江苏无锡214028 [2]新硅微电子有限公司,江苏无锡214028

出　　处：《半导体技术》2014年第10期737-742,共6页Semiconductor Technology

摘　　要：基于带隙基准源的基本原理,设计一种应用于PFM控制升压型DC-DC转换芯片的高精度、低功耗、低电压带隙基准电压源,包含带隙基准主电路和输出偏置电压电路。采用韩国Dongbu 0.35μm BCD工艺进行仿真分析并且流片成功。经过理论分析和仿真模拟,结果表明在-50~125℃条件下,当Vin=3.65 V,温度系数为33×10-6/℃,低频环路增益为30 dB,增益带宽（GBW）为20 kHz,相位裕度为88°,低频下电源抑制比（PSRR）为-90 dB,电源电压在3~5 V变化时,基准输出变化了0.37 mV/V。带隙基准电压源结构简单、电压稳定性好,实测数据符合芯片系统要求,并已用于实际产品的批量生产。Based on the principle of the bandgap reference,a high precision,low power,low voltage bandgap voltage reference was designed that applied to a PFM controlled boost DC-DC converter chip. It includes the bandgap reference circuit and output bias voltage circuit. The simulation analysis was carried out and taped out successfully by South Korea Dongbu 0. 35 μm BCD process. Through the theoretical analysis and simulation,the results show that in the- 50- 125 ℃,when the Vin= 3. 65 V,the temperature coefficient is 33 × 10- 6/℃, low loop gain is 30 dB, gain-band width（ GBW） is20 kHz,phase margin is 88° and at the low frequency power supply rejection ratio（ PSRR） is- 90 dB. The reference output changes 0. 37 mV /V when the power supply voltage change from 3-5 V. The bandgap reference voltage source has the advantages of simple structure and voltage stability,the measured data are met the chip system requirements,and has been used in the actual production of products.

关 键 词：CMOS带隙基准源 BCD工艺 温度系数(TC) 升压型DC-DC转换器 电源抑制比(PSRR) 

分 类 号：TN43[电子电信—微电子学与固体电子学]