SiCp/2024Al基复合材料的界面行为  

The interfacial condition of SiCp /Al composites

作　　者：柳培[1] 王爱琴[1] 郝世明[2] 谢敬佩[1] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]河南科技大学物理工程学院,河南洛阳471023

出　　处：《电子显微学报》2014年第4期306-312,共7页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.51371077)

摘　　要：采用真空热压烧结工艺在580℃下制备了35%(体积分数)SiCp/2024铝基复合材料,利用透射电镜(TEM)、能谱(EDS)、高分辨透射电镜(HRTEM)对复合材料中SiC/Al,合金相/Al的界面结构进行了表征,研究了增强体SiC和基体Al以及热处理前后合金相与基体Al的界面类型,取向结合机制。结果表明,SiC/Al界面清晰平滑,无界面反应物和颗粒溶解现象,也无空洞缺陷。SiC/Al界面类型包括非晶层界面和干净界面。干净界面中SiC和Al之间没有固定或优先的取向关系,取向结合机制为紧密的原子匹配形成的半共格界面。热压烧结所得复合材料中的合金相以Al4Cu9为主,与基体Al的界面为不共格界面,热处理后,合金相Al2Cu弥散分布于基体中,与基体Al的界面为错配度较小的半共格界面。35% SiCp /2024 Al composite materials were produced by vacuum hot pressing sintering process at 580 ℃. The interfacial condition of SiC /Al and alloy phase /Al were characterized by TEM,EDS and HREM. The interface types and combination mechanism of SiC /Al,alloy phase /Al before and after heat treatment were investigated. The results show that the SiC /Al interfaces are clear and smooth,and there are no reactant,defect and the phenomenon of particle dissolution. The interface types of SiCp /Al include amorphous layer interface and clean interface. There are no fixed or preferential crystallographic orientation relationships between SiC and Al,and the combination mechanism of them is the closely matching of atoms forming a half coherent interface. The alloy phases after vacuum hot pressing sintering process is mainly Al4Cu9,which form a incoherent interface with Al. After heat treatment,the phases of Al2 Cu are dispersed in the matrix,which keep a small mismatch degree half coherent interface with Al.

关 键 词：SICP/AL基复合材料 HREM 界面 位向关系 

分 类 号：TB333[一般工业技术—材料科学与工程]