Role of Gate in Triode-Structure for Carbon Nanotube Cold Cathode  

作　　者：Yong-Qing Guo Wei-Min Zheng Xiao-Juan Zhang 

机构地区：[1]Department of Physics and Hydropower Engineering, Gansu Normal University for Nationalities [2]School of Physics, Northwest Normal University

出　　处：《Journal of Electronic Science and Technology》2014年第3期327-330,共4页电子科技学刊（英文版）

摘　　要：Field emission properties of carbon nanotube cold cathode （CNT-CC） of triode- and diode-structure have been investigated by using the finite element method of numerical simulation. Specially, the effects of gate voltage and hole radius R on the emission properties have been analyzed based on the finite element method. Results indicate that the gate can make the excitation electric field E increase, turn-on voltage decrease, and the emission current density J rise. The result shows that the E reaches its maximum value at the top of carbon nanotube （CNT）, and the optimum field emission performance can be obtained when R is equal to 10 times the diameter of the carbon nanotube.Field emission properties of carbon nanotube cold cathode （CNT-CC） of triode- and diode-structure have been investigated by using the finite element method of numerical simulation. Specially, the effects of gate voltage and hole radius R on the emission properties have been analyzed based on the finite element method. Results indicate that the gate can make the excitation electric field E increase, turn-on voltage decrease, and the emission current density J rise. The result shows that the E reaches its maximum value at the top of carbon nanotube （CNT）, and the optimum field emission performance can be obtained when R is equal to 10 times the diameter of the carbon nanotube.

关 键 词：Carbon nanotube field emission triode-structure 

分 类 号：TB383.1[一般工业技术—材料科学与工程]