Surface Passivation Performance of Atomic-Layer-Deposited Al_2O_3 on p-type Silicon Substrates  

作　　者：Yanghui Liu Liqiang Zhu Liqiang Guo Hongliang Zhang Hui Xiao 

机构地区：[1]Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences

出　　处：《Journal of Materials Science & Technology》2014年第8期835-838,共4页材料科学技术（英文版）

基　　金：the financial supports from the National Natural Science Foundation of China(No.11104288);the Zhejiang Postdoctoral Science Foundation (Bsh1202034)

摘　　要：Surface passivation performances of Al2O3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition（ALD） were investigated as a function of post-deposition annealing conditions.The maximal minority carrier lifetime of 4.7 ms was obtained for AI2O3 passivated p-type Si.Surface passivation mechanisms of Al2O3 layers were investigated in terms of interfacial state density（Dit） and negative fixed charge densities（Qfix） through capacitance—voltage（C— V） characterization.High density of Qfix and low density of Dit were needed for high passivation performances,while high density of Dit and low density of Qfixdegraded the passivation performances.A low Dit was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al2O3 layer.Surface passivation performances of Al2O3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition（ALD） were investigated as a function of post-deposition annealing conditions.The maximal minority carrier lifetime of 4.7 ms was obtained for AI2O3 passivated p-type Si.Surface passivation mechanisms of Al2O3 layers were investigated in terms of interfacial state density（Dit） and negative fixed charge densities（Qfix） through capacitance—voltage（C— V） characterization.High density of Qfix and low density of Dit were needed for high passivation performances,while high density of Dit and low density of Qfixdegraded the passivation performances.A low Dit was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al2O3 layer.

关 键 词：Atomic layer deposition AL2O3 PASSIVATION FILMS 

分 类 号：TB306[一般工业技术—材料科学与工程]