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作 者:夏昕[1,2] 雷霆[3,2] 裴坚[3,2] 刘晨江[1,2]
机构地区:[1]石油天然气精细化工教育部&自治区重点实验室 乌鲁木齐绿色催化与合成技术重点实验室 新疆大学化学化工学院,乌鲁木齐830046 [2]北京分子科学国家实验室,北京100871 [3]北京大学化学与分子工程学院,北京100871
出 处:《有机化学》2014年第9期1905-1915,共11页Chinese Journal of Organic Chemistry
基 金:国家自然科学基金(Nos.21262035,21162025);北京分子科学国家实验室开放课题资助项目~~
摘 要:自20世纪80年代至今,有机场效应晶体管(Organic field-effect transistor,OFET)的研究已经取得了很大的发展,目前可用于场效应晶体管的有机半导体材料已达数百种.经过30年的发展,有机场效应晶体管的迁移率从10-6-10-5cm2·V-1·s-1提高到12 cm2·V-1·s-1,增长了6个数量级,其性能已经超过了无定形性硅场效应晶体管(0.1-1 cm2·V-1·s-1).值得指出的是,目前该类高性能的材料几乎都是基于给体-受体(Donor-Acceptor,简称D-A)的共轭聚合物,它也被誉为第三代半导体材料.本文综述了近年来国内外D-A共聚物半导体材料的研究状况,对空穴传输型、双极传输型和电子传输型的D-A共聚物半导体材料进行了分类总结和评述,并对其设计思路,器件制备及性能做了详细介绍,总结了材料的化学结构与器件性能间的基本规律,为今后应用于有机场效应晶体管的给体-受体共聚物半导体材料提供设计思路.Significant progress has been made in organic field-effect transistors (OFETs) since 1980s. Up to now, hundreds of organic semiconductors used for OFETs have been synthesized. After 30 years of development, the device performance of polymer FETs has been significantly improved, and the mobility has been improved from 10-6-10-5 cm2-V-1·s-1 to 12 cm2 ·V-1·s-1, surpassing that of amorphous silicon (a-Si) FETs (0.1 - 1 cm2·V- 1·s -1). Note that most of the high-performance polymer FET materials are based on donor-acceptor (D-A) copolymers, which are generally synthesized by the copolymerization between two monomers (donor and acceptor). D-A copolymers have been heralded as the third generation of semiconductor materials, due to their considerable contribution to the fast development of conjugated polymers. In this review, recent studies in D-A copolymer FET materials are summarized from the perspective of design, synthesis, and device performance. Different types of polymer FETs including p-type, ambipolar, and n-type FETs based on D-A copolymers were compared and summarized respectively. It is anticipated to penetrate more deeply the basic relationships among the chemical structure-packing structure-property, which could provide valuable information for the future materials exploitation.
关 键 词:有机场效应晶体管 聚合物材料 给体-受体共聚物材料
分 类 号:TN386[电子电信—物理电子学]
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