氢化处理对Li-W共掺杂ZnO薄膜性能的影响  

Effect of Hydrogenation on Li-W Co-Doped ZnO Thin Films

作　　者：陈义川[1] 胡跃辉[1] 张效华[1] 马德福[1] 刘细妹[1] 徐斌[1] 张志明[1] 

机构地区：[1]景德镇陶瓷学院机械电子工程学院,景德镇333000

出　　处：《真空科学与技术学报》2014年第9期915-920,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然基金项目(61066003);江西省科技支撑计划资助项目(2010BGA01100);江西省对外合作资助项目(20111BDH80031;20132BDH80025);江西省自然基金资助项目(20111BAB202005;20132BAB202001);江西省主要学科学术和技术带头人培养计划项目(20123BCB22002);江西省高等学校科技落地计划(KJLD12085);江西省教育厅科技资助项目(GJJ12494;GJJ13643;GJJ13625)

摘　　要：不同H2气氛中通过RF磁控溅射在石英衬底上制备Li-W共掺杂ZnO(LWZO)薄膜。对样品进行X射线衍射、扫描电镜(SEM)、X射线光电子(XPS)、透过率以及室温光致发光(PL)谱分析。结果表明:适当氢化处理形成LWZO∶H薄膜,有助于提高薄膜的结晶质量;SEM结果显示LWZO∶H薄膜表面晶粒生长更均匀,表面更平整;薄膜的透光率保持在85%左右。从XPS分析可知,在H2气氛中,H可以有效地提高沉积粒子的活性,使W6+的掺杂效率提高。同时H+进入LWZO薄膜内部可以钝化薄膜的内部缺陷,提高载流子浓度,增加薄膜的禁带宽度。室温PL谱结果表明:LWZO的PL由本征发光及缺陷发光组成,经过氢化处理的薄膜的缺陷发光减少,本征发光强度增强。The surfaces of Li-W co-doped ZnO（ L WZO： H）films, synthesized by RF magnetron sputtering, were mod- ified by hydrogenation. The impacts of the synthesis conditions, particularly the hydrogenation and the content of Li-W, on micmstmctures and optical properties of the LWZO：H films were evaluated. The LWZO：H films were characterized with X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy（XPS）, and photoluminescence spec- troscopy. The results show that hydrogenation markedly improves the crystallinity, surface smoothness, and compactness of the LWZO： H films with a transmittance of about 85 %. In addition, H ~ ion in the film effectively increases the activity of the doped Li-W, passivates some defects,widens the band-gap, and increases carrier concentration. The intrinsic lumines- cence was found to be stronger than that of the control sample possibly because of defect-induced luminescence reduction.

关 键 词：Li-W共掺杂ZnO 掺杂效率 X射线光电子谱 光致发光 

分 类 号：O484.1[理学—固体物理]