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出 处:《光电工程》2014年第9期75-80,共6页Opto-Electronic Engineering
基 金:国家自然科学基金资助项目(61106043)
摘 要:本文基于为ITO/2-TNATA(20 nm)/NPB(30 nm)/BePP2:DCJTB(45 nm:X%)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm)的白光器件结构(X为DCJTB的掺杂浓度(质量分数))。采用真空热蒸镀的方法,在高精度膜厚测控仪的监控下分别制备了发光层掺杂浓度为1,1.5,2.0,2.5,3.0不同器件,并对各器件性能进行了测试。实验结果表明:当DCJTB的掺杂浓度为2.0%时,平衡了器件中电子和空穴的传输能力,使载流子复合形成激子的几率增加,既使载流子的传输能力明显改善,并且有效地抑制了器件的荧光猝灭效应。在12 V电压下,可以获得发光亮度最高达到9 868cd/m2,发光效率大于7.2 cd/A,且色坐标为(0.334,0.337)的较理想白光有机发光器件。Based on the white device structure of ITO/2-TNATA(20 nm)/NPB(30 nm)/BePP2:DCJTB(45 nm:X %)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm), where X was the doping concentration of DCJTB, we fabricated different devices and studied their performance whose doping concentration (X) were 1, 1.5, 2.0, 2.5, 3.0 respectively, with high accuracy film thickness control instrument monitoring and vacuum thermal evaporation method. The results show that, when DCJTB doping concentration was 2.0 %, balance of transmission capacity of electron and hole in the device was achieved. The probability of forming excitons by carrier recombination was increased, which made both the transmission capacity of carriers increased and the fluorescence quencher effect of the device restrained effectively. At 12 V, the white organic light-emitting brightness was up to 9 868 cd/m2, luminous efficiency was more than 7.2 cd/A, and CIE coordinates reached (0.334, 0.337) which was close to the ideal white light.
分 类 号:TN383[电子电信—物理电子学]
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