Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays  

作　　者：Saeideh Ramezani Sani 

机构地区：[1]Department of Physics, Roudehen Branch, Islamic Azad University

出　　处：《Chinese Physics B》2014年第10期469-471,共3页中国物理B（英文版）

摘　　要：The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

关 键 词：TiO2 nanowires PHOTORESPONSE I-V characteristics HETEROJUNCTION 

分 类 号：TN304.2[电子电信—物理电子学]