Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain  

作　　者：赵胜雷 宓珉瀚 侯斌 罗俊 王毅 戴杨 张进成 马晓华 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University [2]School of Advanced Materials and Nanotechnology, Xidian University

出　　处：《Chinese Physics B》2014年第10期472-476,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)

摘　　要：In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.

关 键 词：A1GaN/GaN high-electron mobility transistors （HEMTs） forward blocking voltage reverse blocking voltage Schottky drain 

分 类 号：TN386[电子电信—物理电子学] TN386.3