双层复合有机栅绝缘膜漏电机理的研究  

Leakage mechanism of organic double layer gate insulating film

作　　者：景亚霓[1] 王乐[1] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《液晶与显示》2014年第5期681-685,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金项目(No.60776056)

摘　　要：本文研究了利用旋涂法在硅衬底上制备的聚甲基丙烯酸甲酯（PMMA）和三氟乙烯-偏氟乙烯的共聚物（P（VDF-TrFE））双层复合绝缘膜的漏电机理,采用这种膜的MIS器件的单位面积电容为32 nF/cm2.电流-电压测试结果显示在不同的电压范围内其漏电曲线出现转折点,反映了这种膜在不同的电场下有不同的漏电机制.对实验结果拟合分析表明,在0～1 V电压范围内,其漏电主要是Poole-Frenkel机制控制;在1～25 V电压范围内,主要是以肖特基发射电流为主;而在35～40 V的电压范围内,绝缘膜漏电流是空间电荷限制电流.The leakage current mechanism of poly（methyl-methacrylate） and poly （vinylidene fluoridetrifluoroethylene） double layer structure insulator film, which was fabricated by spin-coat process on silicon and provided a capacitance approaching 32 nF/cm2 , was investigated in the paper. The experi- ment result shows that there are two turning points on the leakage current-vohage curve. The result implies that the film leakage mechanism is different under different electric field intensity. Fitting analysis of the experiment results shows that leakage current of the insulating film is mainly caused by Poole-Frenkel effect in voltage range of 0-1 V, and in voltage range of 1-25 V, it was affected by Schottky emission. The leakage current is mainly controlled by space charge limit current in voltage range of 25-40 V.

关 键 词：OTFT 双层栅绝缘膜 漏电机制 

分 类 号：TM215.92[一般工业技术—材料科学与工程]