基于半导体-金属相变材料的宽谱、偏振选择的红外光开关(英文)  

Broadband and polarization-selective optical switch in infrared spectrum based on SMT materials

作　　者：张璇如[1] 王威[2] 向斌[2] 陆亚林[1,2] 

机构地区：[1]中国科学技术大学合肥微尺度物质科学国家实验室(筹)应用科学研究中心,安徽合肥230026 [2]中国科学技术大学材料科学与工程系中国科学院能量转换材料重点实验室,安徽合肥230026

出　　处：《红外与激光工程》2014年第9期2787-2792,共6页Infrared and Laser Engineering

基　　金：国家重点基础研究发展计划(973计划)(2012CB922000)

摘　　要：提出了一种基于半导体-金属相变材料和掩埋金属光栅结构的新型红外光开关。该结果由电磁场有限元方法计算得到。设计了在近红外波段表现出宽谱的、偏振选择的全光开关效应。掩埋金属光栅极大的提高了二氧化钒薄膜作为光开关的消光比,使得该结构在亚波长尺寸获得了高的消光比。结构的光学响应随入射角变化并不敏感。结构的透过、吸收特性可由结构参数进行调节。此设计在红外光通信、光计算以及军事探测、无损检测等领域具有潜在的应用。A new design of optical switch composed of a vanadium dioxide（VO2） thin film and embedded sub-wavelength metallic gratings was proposed. The numerical calculations of the device performance were carried out using the Finite Element Method （FEM）. This design exhibited broadband and polarization selective all-optical switching effects in the near-infrared spectrum. The embedded gratings enhanced the extinction ratio of the VO2 film, and achieved high extinction ratio in sub-wavelength device size. The optical properties of the proposed design depended little on the incident angle. In addition, the transmittance and absorbance can be tuned by the geometric parameters. The device has great potential usages as the infrared spectrum is of great important both in optical communication and computering, and optical imaging in military reconnaissance and industrial non-destructive detecting.

关 键 词：半导体-金属相变材料 宽谱光开关 掩埋光栅 

分 类 号：O439[机械工程—光学工程]