面向非易失内存的结构和系统级设计与优化综述  

Survey of architecture and system level optimization for non-volatile main memory

作　　者：孙广宇[1] 舒继武[2] 王鹏[1] 

机构地区：[1]北京大学信息科学技术学院,北京100871 [2]清华大学计算机系,北京100084

出　　处：《华东师范大学学报（自然科学版）》2014年第5期72-81,共10页Journal of East China Normal University(Natural Science)

基　　金：国家863课题(2013AA013201)

摘　　要：当今各类计算机应用都进入一个飞速发展的阶段,无论是"计算密集型"还是"存储密集型"应用都对存储系统的容量、性能以及功耗不断提出更高的要求.然而,由于传统内存工艺(DRAM)的发展落后于计算逻辑工艺(CMOS),基于DRAM的内存设计逐渐无法满足这些设计需求.同时,基于HDD的外存性能与DRAM主存间的差距也逐渐增加.而各种非易失存储工艺取得长足的进步,为解决这一问题提供了新的机遇.本文就近年来针对非易失内存的结构和系统级设计与优化的研究工作进行综述,揭示非易失内存对存储系统的性能、功耗等都有明显的改善.With the rapid improvement of modern computing applications, there is an increasing requirement of capacity, performance, and power consumption of memory system for both ＂com- puting-intensive＂ and ＂data-intensive＂ applications. However, main memory based on traditional DRAM technology cannot fully satisfy the requirement because the improvement of DRAM tech- nology is slower than that of CMOS technology. Moreover, it becomes even worse since the per- formance gap between HDD based storage and DRAM based main memory keeps increasing at the same time. Recently, the substantial progress of various non-volatile memory technologies has provided an opportunity to mitigate this problem. This paper presents a survey of recent ar- chitecture and system level research work on non-volatile main memory. It shows that differenttypes of non-volatile main memory can help improve performance and reduce power consumption of memory system significantly.

关 键 词：非易失存储 存储类内存 存储结构 文件系统 I/O接口 

分 类 号：TP303[自动化与计算机技术—计算机系统结构]