裂解硒技术及在CIGS薄膜太阳电池中的应用  

Craked selenium applied to CIGS thin film solar cell

作　　者：王赫[1] 冯金辉[1] 赵岳[1] 李微[1] 赵彦民[1] 

机构地区：[1]中国电子科技集团公司第十八研究所重点实验室,天津300384

出　　处：《电源技术》2014年第10期1961-1964,共4页Chinese Journal of Power Sources

摘　　要：普通Se源提供的硒蒸气主要由活性较低的Sen大原子团构成(n≥4),这不利于生长高质量的CIGS薄膜。理论计算表明,等离子体裂解Se蒸气技术和热裂解Se蒸气技术均可以提供足够的能量使Sen大原子团裂解为高活性的Se2或Se。实验证明,裂解Se技术显著降低了CIGS薄膜生长过程中Se原料的使用量。高化学活性的硒蒸气使生长CIGS薄膜的动力学过程发生变化,显著改善了低温沉积CIGS薄膜性质,在一定程度上提高了相应的电池性能。因此,裂解Se蒸气技术在聚酰亚胺(PI)衬底CIGS薄膜太阳电池的研究及组件产业化领域具有很好的应用前景。Selenium vapor from a conventional evaporative Se soume consisted of large molecular chains of Se such as Sen （n≥4） with low chemical activity, which was unfavorable for depositing high quality CIGS films. It was substantiated by the results of theoretical calculation that cracked selenium technique based on the rf-plasma and/or high temperature heating methods both provided enough energy for producing Se2 and/or Se with high chemical activity. Experiment results indicate that a CIGS growth technique which utilizes the cracked selenium source led to a significant reduction in amount of Se material used. Furthermore, the growth kinetics of CIGS film was modified by the higher reactivity of the active Se-species. The properties of CIGS absorbers deposited at low temperature and solar cell efficiencies were enhanced. Therefore, cracked selenium was a promising technique available for the industrialization of flexible CIGS thin film solar cell and modules on polyimide foils.

关 键 词：裂解Se技术 CIGS薄膜 Se原料的消耗量 低温沉积 

分 类 号：TM914[电气工程—电力电子与电力传动]