流延法制备纳米SiO_2压电陶瓷的结构及性能  

Research on the Structure and Piezoelectric Properties of Silica Piezoelectric Nano-ceramic Prepared by Tape-Casting Process

作　　者：卓磊[1] 陈文革[1] 张洋[1] 辛菲[1] 赵珊珊[1] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《压电与声光》2014年第5期775-778,共4页Piezoelectrics & Acoustooptics

基　　金：西安市科技计划基金资助项目(CXY1124(1))

摘　　要：采用流延法使用无定型纳米SiO2原料粉制备SiO2压电陶瓷,XRD和SEM结果表明,烧结温度为850℃和950℃时未发生晶化反应,当烧结温度为1 050℃时生成α-方石英,晶粒尺寸随烧结温度的升高而长大,不同烧结温度下压电常数分别为1.1pC/N,1.2pC/N和1.4pC/N,烧结温度越高介电常数越大,机械品质因数越大,而介电损耗与烧结温度无关。Silica nano-ceramic was prepared by silica nanoparticle and tape-casting process, The result of XRD and SEM showed that crystallization reaction did not happen when the sintering temperature was 850℃ or 950℃, however a-cristobalite was found at 1 050℃ the grain size was increasing along with the increment of sintering temperature, on the other hand the piezoelectric constant were 1.1 pC/N, 1.2 pC/N and 1.4 pC/N with the sintering temperature increased. The dielectric constant and mechanical quality factor were higher at higher sintering temperature, whereas the dielectric losses had no relation with the sintering temperature.

关 键 词：氧化硅 压电陶瓷 纳米粉 流延成型 低温烧结 

分 类 号：TM22[一般工业技术—材料科学与工程]