Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis  

作　　者：刘畅 俞文杰 张波 薛忠营 吴汪然 赵毅 赵清太 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [3]Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 [4]Peter Grunberg Institute 9, Forschungszentrum Julich and 3ARA Fundamentals of Future Intormation Technology, Julich 52425, Germany

出　　处：《Chinese Physics Letters》2014年第10期93-95,共3页中国物理快报（英文版）

基　　金：Supported by the Science and Technology Commission of Shanghai Municipality under Grant Nos 12ZR1453000, 12ZR1453100 and 12ZR1436300, the National Natural Science Foundation of China under Grant Nos 61306126, 61306127 and 61106015, and the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering and Open Project of State Key Laboratory of Functional Materials for Informatics under Grant No SKL201304.

摘　　要：The gate-induced-drain-leakage of MOSFETs is analyzed to better understand the sub-threshold swing degradation of SiOe tunnel field-effect transistors and their band-to-band tunneling mechanism. The numerical model of the analysis is elaborated. Equivalent trap energy levels are extracted for Si and strained SiOe. It is found that the equivalent trap energy level in SiGe is shallower than that in Si.The gate-induced-drain-leakage of MOSFETs is analyzed to better understand the sub-threshold swing degradation of SiOe tunnel field-effect transistors and their band-to-band tunneling mechanism. The numerical model of the analysis is elaborated. Equivalent trap energy levels are extracted for Si and strained SiOe. It is found that the equivalent trap energy level in SiGe is shallower than that in Si.

分 类 号：TN322.8[电子电信—物理电子学] TQ422[化学工程]