Non-Volatile Threshold Adaptive Transistors with Embedded RRAM  

作　　者：邓宁 贾弘扬 吴畏 吴华强 

机构地区：[1]Institute of Microelectronics, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2014年第10期153-156,共4页中国物理快报（英文版）

摘　　要：We propose a novel nonvolatile threshold adaptive transistor （TAT） for neuromorphic circuits. The threshold adaptive transistor is achieved by embedding a resistive random-access memory （RRAM） material stack between the gate electrode and gate dielectric. During operation, the embedded RRAM device is kept at a high resistance state, which makes it act as a nonvolatile capacitor. The threshold could be nonlinearly adjusted by the voltage pulses applied on the gate of the transistor. We quantitatively estimate the range of the capacitance variation of the RRAM device. The threshold voltage of the TAT is simulated and shows expected variation. The simulated output of an inverter using a TAT shows a nonlinear adaptive behavior.We propose a novel nonvolatile threshold adaptive transistor （TAT） for neuromorphic circuits. The threshold adaptive transistor is achieved by embedding a resistive random-access memory （RRAM） material stack between the gate electrode and gate dielectric. During operation, the embedded RRAM device is kept at a high resistance state, which makes it act as a nonvolatile capacitor. The threshold could be nonlinearly adjusted by the voltage pulses applied on the gate of the transistor. We quantitatively estimate the range of the capacitance variation of the RRAM device. The threshold voltage of the TAT is simulated and shows expected variation. The simulated output of an inverter using a TAT shows a nonlinear adaptive behavior.

分 类 号：TN386.1[电子电信—物理电子学] TP333[自动化与计算机技术—计算机系统结构]