ZnO缓冲层对W掺杂VO_2薄膜光电性能的影响  

Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film

作　　者：周矗[1] 李合琴[1] 刘心同[1] 徐昱昊 叶楠[1] 钱满满 成聪[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《稀有金属与硬质合金》2014年第5期39-42,共4页Rare Metals and Cemented Carbides

基　　金：中央高校基本科研业务费专项资金(4115100010);安徽省自然科学基金(090414182);安徽省高校自然科学基金(KJ2009A091;KJ2012A228);合肥工业大学2013年大学生创新性实验计划项目(2013CXSY145)

摘　　要：用磁控溅射法在载玻片基底上分别制备W-VO2单层薄膜与ZnO/W-VO2双层薄膜,并在Ar气氛中进行退火。用X射线衍射仪、LCR测试仪、扫描电镜、紫外-可见分光光度计和红外光谱仪对薄膜样品的晶体结构、电阻-温度特性、表面形貌、可见光透过率和红外光透过率进行测试。结果表明:ZnO/W-VO2双层薄膜的相变温度降低至35℃,薄膜生长更加致密均匀,可见光透过率提高约23%,对红外光的屏蔽效果更优。The W-VO2 monolayer thin film and ZnO/W-VO2 bilayer thin film were respectively prepared by magnetron sputtering on glass substrates, and then annealed in Ar atmosphere. Their crystal structures, resistance-temperature curves, surface morphologies, visible light transmittance and infrared transmittance were measured with X-ray diffractometer, LCR tester, scanning electron microscope, UV-Vis spectrophotometer and infrared spectrometer. The results show that the phase transition temperature of ZnO/W-VO2 bilayer thin film decreases to 35 ℃ ,thin film growth is more compact and uniform,its visible light transmittance increases by about 23% ,and infrared light shielding effect is better.

关 键 词：ZnO/W-VO2双层薄膜 W-VO2单层薄膜 相变温度 电阻-温度曲线 可见光透过率 红外光透过率 

分 类 号：TB43[一般工业技术]