准相位匹配砷化镓晶体制备工艺及脉冲CO_2激光倍频研究  

Research on Preparation of Quasi-Phase-Matched GaAs and Pulsed CO_2 Laser Frequency Doubling

作　　者：王昊[1] 惠勇凌[1] 姜梦华[1] 雷訇[1] 李强[1] 黄伟[2] 郑义军[2] 谭荣清[2] 

机构地区：[1]北京工业大学激光工程研究院,北京100124 [2]中国科学院电子学研究所,北京100190

出　　处：《中国激光》2014年第10期159-163,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(61378023);北京市自然科学基金(4112005)

摘　　要：对准相位匹配砷化镓（GaAs）晶体扩散键合制备方法进行了研究。采用超高真空预键合-高温退火方法,在不同载荷压力条件下,完成了三组准相位匹配GaAs倍频晶体的制备。准相位匹配结构的极化周期长度为219μm,堆叠层数44层,直径18mm,有效通光孔径达到15mm,在通光面未镀膜条件下,最高的基频光与倍频光透射率在30%以上。以主脉冲宽度90ns,拖尾宽度2～6μs的横向激励大气压（TEA）-CO2激光器作为基频光光源,通过调谐基频光波长,在4.63～5.37μm波段内得到了效率大于4%的倍频输出。当基频光波长为10.68μm,主脉冲能量为409mJ,晶体接收基频光功率密度达到3.65MW/cm^2时,得到了单脉冲能量26.9mJ,峰值功率298kW,倍频效率达到6.58%的倍频输出。A diffusion bonding method of quasi-phase-matched（QPM）-GaAs crystal preparation is studied.By ultra-high vacuum pre-bonding-high temperature annealing method,the preparation of three quasi-phase-matched crystals is completed under different load pressures.The polarization period length of the QPM structure is 219μm,number of layers is 44,the diameter is 18 mm,and the effective aperture is 15 mm.The best transmittance of the foundation and frequency doubling is above 30% without anti-reflection coating.Using transversely excited atmospheric pressure（TEA）-CO2 laser with 90 ns wide main pulse and 2～6μs wide tailing as foundation source,we acquire second harmonic generaction（SHG）output with efficiency more than4%on4.63～5.37μm waveband by tuning foundation wavelength.When the foundation wavelength is10.68μm,main pulse energy is 409 mJ,the density in QPM-GaAs is 3.65 MW/cm^2,we get SHG output with 26.9 mJ pulse energy,298 kW peak power,and the SHG efficiency of 6.58%.

关 键 词：非线性光学 倍频 准相位匹配 砷化镓 

分 类 号：O437.1[机械工程—光学工程]