A combined experimental-computational study on nitrogen doped Cu_2O as the wide-spectrum absorption material  

作　　者：张平 周玉荣 闫清波 刘丰珍 李婧雯 董刚强 

机构地区：[1]University of Chinese Academy of Sciences [2]Beijing University of Technology

出　　处：《Journal of Semiconductors》2014年第10期12-16,共5页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2011CBA00705);the Beijing City Science and Technology Project(No.D121100001812003)

摘　　要：Highly-oriented Cu2O thin films were prepared by low temperature thermal oxidation of evaporated Cu thin films. The films were doped with different doses of nitrogen by ion implantation. An absorption peak ap- pears below the absorption edge in the absorption spectrum of highly nitrogen doped Cu2O. The effect of nitrogen doping on the crystal structure, electronic structure and optical properties of Cu2O were investigated systemati- cally by first-principles calculations. The calculation results indicate that an intermediate energy band exists in the forbidden gap of highly nitrogen doped Cu2O. The electron transition from the valence band to the intermediate band is consistent with the absorption peak by experimental observation. Experimental and computational results indicate that nitrogen doped Cu2O could be a suitable absorbing material candidate for wide-spectrum detectors or intermediate band solar cells.Highly-oriented Cu2O thin films were prepared by low temperature thermal oxidation of evaporated Cu thin films. The films were doped with different doses of nitrogen by ion implantation. An absorption peak ap- pears below the absorption edge in the absorption spectrum of highly nitrogen doped Cu2O. The effect of nitrogen doping on the crystal structure, electronic structure and optical properties of Cu2O were investigated systemati- cally by first-principles calculations. The calculation results indicate that an intermediate energy band exists in the forbidden gap of highly nitrogen doped Cu2O. The electron transition from the valence band to the intermediate band is consistent with the absorption peak by experimental observation. Experimental and computational results indicate that nitrogen doped Cu2O could be a suitable absorbing material candidate for wide-spectrum detectors or intermediate band solar cells.

关 键 词：cuprous oxide ion implantation nitrogen doping intermediate band first-principles calculations 

分 类 号：TM914.4[电气工程—电力电子与电力传动]