Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates  

作　　者：Pramod Kumar Tiwari Gopi Krishna Saramekala Sarvesh Dubey Anand Kumar Mukhopadhyay 

机构地区：[1]National Institute of Technology, Rourkela, Department of Electronics and Communication Engineering [2]Faculty of Electronics and Communication, SRM University

出　　处：《Journal of Semiconductors》2014年第10期30-36,共7页半导体学报（英文版）

摘　　要：The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTM by Silvaco Inc.The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTM by Silvaco Inc.

关 键 词：strained-Si channel Si1-xGex substrate dual-metal gate subthreshold current subthreshold swing 

分 类 号：TN386[电子电信—物理电子学]