Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs  

作　　者：张亚民 冯士维 朱慧 龚雪芹 邓兵 马琳 

机构地区：[1]Institute of Semiconductor Device Reliability Physics College of Electronic Information & Control Engineering,Beijing University of Technology

出　　处：《Journal of Semiconductors》2014年第10期37-40,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005);the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003);the Doctoral Fund of Innovation of Beijing University of Technology

摘　　要：The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 8μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.The effects of self-heating and traps on the drain current transient responses of AlGaN/GaN HEMTs are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 8μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.

关 键 词：AlGaN/GaN HEMTs drain transient response channel temperature rise SELF-HEATING TRAPS 

分 类 号：TN386[电子电信—物理电子学]