Room temperature quantum cascade detector operating at 4.3 μm  

作　　者：王雪娇 刘俊岐 翟慎强 刘峰奇 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2014年第10期66-69,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2013CB632802/04);the National Natural Science Foundation of China(Nos.61376051,10990103)

摘　　要：A strain-compensated InP-based InGaAs/lnAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature （300 K） with a responsivity of 1.27 mA/W and a Johnson noise limited detectivity of 1.02 × 10^7 cm-Hz1/2/W. At 80 K, the responsivity and detectivity are 14.55 mA/W and 1.26 ×10^10cm.Hz1/2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.A strain-compensated InP-based InGaAs/lnAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature （300 K） with a responsivity of 1.27 mA/W and a Johnson noise limited detectivity of 1.02 × 10^7 cm-Hz1/2/W. At 80 K, the responsivity and detectivity are 14.55 mA/W and 1.26 ×10^10cm.Hz1/2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.

关 键 词：infrared detector quantum cascade molecular beam epitaxy 

分 类 号：TN303[电子电信—物理电子学]