Slurry components of TiO_2 thin film in chemical mechanical polishing  

作　　者：段波 周建伟 刘玉岭 王辰伟 张玉峰 

机构地区：[1]Institute of Microelectronics, Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第10期190-194,共5页半导体学报（英文版）

基　　金：Project supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Province Department of Education Fund(No.2011128)

摘　　要：A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.

关 键 词：TiO2 thin film slurry components surface roughness removal rate 

分 类 号：TN305.2[电子电信—物理电子学]