离子束刻蚀碲镉汞中转型宽度  

Conductivity type conversion in ion-beam-milled HgCdTe

作　　者：徐国庆[1,2] 刘向阳[1] 王仍[1] 储开慧[1] 汤亦聃[1] 乔辉[1] 贾嘉[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海200083 [2]中国科学院研究生院,北京100049

出　　处：《红外与毫米波学报》2014年第5期477-480,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11304335)~~

摘　　要：用Ar+离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔,利用激光诱导电流方法测试转型后的n区宽度.研究发现,在相同的刻蚀条件下,n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时,n区宽度随汞空位浓度的增加呈线性减小;当汞空位浓度一定时,n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.After different loopholes are produced by Ar＋ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if vol- ume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.

关 键 词：激光诱导电流 p型HgCdTe Ar+离子束刻蚀 转型宽度 

分 类 号：TN213[电子电信—物理电子学]