激光脉冲退火对40nm超浅结和pMOS器件性能的优化  

Optimization of 40 nm Ultra Shallow Junction and pMOS Device Performance by Laser Spike Annealing

作　　者：张冬明 刘巍 张鹏 

机构地区：[1]上海华力微电子有限公司,上海201203

出　　处：《半导体技术》2014年第11期850-854,共5页Semiconductor Technology

摘　　要：使用二次离子质谱(SIMS)和电学特性参数测量深入研究了在40 nm低功耗工艺中,激光脉冲退火(LSA)对超浅结(USJ)以及其对pMOS器件有源区和多晶硅栅方块电阻、阈值电压卷曲曲线和本征特性曲线的影响。从SIMS结果可以看出,LSA由于其作用时间非常短(微秒量级),与锗的预非晶化离子注入结合起来,在完成注入离子激活的同时,有效避免不必要的结扩散,从而控制结深,形成超浅结。从进一步的电学特性测量上发现LSA对器件的薄层电阻、结电容和结漏电流也有非常大的影响:LSA和尖峰退火(SPK)共同退火的方式较单独的SPK退火方式,多晶硅方块电阻降低10%,而结电容和结漏电流也相应分别降低3%和50%,此外,相比于单独的SPK退火,LSA和SPK共同退火的方式也具有更好的阈值电压卷曲曲线和本征特性曲线特性。By using the secondary ion mass spectrometry （SIMS） and electrical parameter measure- ment, the effects of laser spike annealing （LSA） on the ultra-shallow junction （USJ）, pMOS active area and polysilicon sheet resistance, threshold voltage roll-off curve and intrinsic characteristics curve in 40 nm low power process was studied. The SIMS results show that the application of LSA together with Ge pre-amorphous implant can effectively avoid unnecessary junction diffusion, therefore reduce the junction depth and develop USJ while completing the dopant activation. Shown from further electrical pa- rameter measurement, LSA has certain impact on the device sheet resistance, junction capacitance and junction leakage current. Compared with the spike anning SPK-only annealing, LSA and SPK co-annea- ling （LSA＋SPK） can make polysilicon sheet resistance about 10% lower, the junction capacitance 3% lower and leakage current 50% lower. Furthermore, compared with only SPK annealing, LSA and SPK co-annealing can get better threshold voltage roll-off curve and the intrinsic performance curve.

关 键 词：激光脉冲退火(LSA) 超浅结(USJ) 二次离子质谱(SIMS) 卷曲曲线 本征 特性曲线 

分 类 号：TN405[电子电信—微电子学与固体电子学]