测试参数对掺As ZnO微米线光致发光谱的影响  

Effects of Measuring Parameters on the Photoluminescence of As-Doped ZnO Microwires

作　　者：张贺秋[1] 金叶[1] 胡礼中[1] 汪瑞谱 郭铖[1] 李泽宇[1] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116024

出　　处：《半导体技术》2014年第11期867-871,877,共6页Semiconductor Technology

基　　金：中央高校基本科研业务费专项资金资助项目(DUT14LK35)

摘　　要：光致发光谱是发光材料在特定光源照射下发出的不同波长光的强度分布,可广泛应用于材料的光学及掺杂特性研究领域,是一种非破坏性的测试技术。利用水热法生长了ZnO微米线,用闭管热扩散方法进行了掺As处理,获得掺As的ZnO微米线,并对掺As的ZnO微米线进行光致发光谱测试。通过改变两个测试参数:CCD探测器的曝光时间及光入射狭缝的宽度,研究这两个参数的变化对测试谱线的影响。测试结果表明只有在适合的曝光时间及狭缝宽度时才能较充分地反映材料的特性。Photoluminescence spectra are the intensity distribution of the light with the different wavelengths of the luminescent material irradiated by the light with special wavelength. As a nondestruc- tive technology, photoluminescence spectra measurements have been widely used in the study of optical and doping properties of materials. The ZnO microwires were grown by hydrothermal method. As-doped ZnO mierowires were fabricated by the heat diffusion in a closed quartz. Then, the photoluminescence spectra of As-doped ZnO were measured. The effects of CCD detector＇s exposure time and light entrance slit width on the photoluminescence characteristics of As-doped ZnO microwires were investigated by the photoluminescence measurement. The results show only if the exposure time and the entrance slit width are precisely modulated, the properties of material could be reflected fully.

关 键 词：氧化锌 水热法 光致发光 曝光时间 狭缝 

分 类 号：TN304.21[电子电信—物理电子学]